BC848BWT1 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC846AWT1/D General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT- 323/SC- 70 which is designed for low power surface mount applications. 1 BASE 2 EMITTER Symbol VCEO VCBO VEBO IC BC846 65 80 6.0 100 BC847 45 50 6.0 100 BC848 30 30 5.0 100 Unit V V V m Adc COLLECTOR 3 BC846AWT1,BWT1 BC847AWT1,BWT1, CWT1 BC848AWT1,BWT1, CWT1 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Junction and Storage Temperature Symbol PD Rq JA PD TJ, Tstg Max 150 833 2.4 - 55 to +150 Unit m W °C/W m W/°C °C CASE 419- 02, STYLE 3 SOT- 323/SC- 70 DEVICE MARKING BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F; BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = 10 m A) Collector - Emitter Breakdown Voltage (IC = 10 µA, VEB = 0) Collector - Base Breakdown Voltage (IC = 10 m A) Emitter - Base Breakdown Voltage (IE = 1.0 m A) Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) 1. FR- 5 = 1.0 x 0.75 x 0.062 in BC846 Series BC847 Series BC848 Series BC846 Series BC847 Series BC848 Series BC846 Series BC847 Series BC848 Series BC846 Series BC847 Series BC848 Series V(BR)CEO 65 45 30 80 50 30 80 50 30 6.0 6.0 5.0 - -...